1 // SPDX-License-Identifier: GPL-2.0+
2 /*
3  * DDR3 mem setup file for board based on EXYNOS5
4  *
5  * Copyright (C) 2012 Samsung Electronics
6  */
7 
8 #include <common.h>
9 #include <config.h>
10 #include <asm/io.h>
11 #include <asm/arch/clock.h>
12 #include <asm/arch/cpu.h>
13 #include <asm/arch/dmc.h>
14 #include <asm/arch/power.h>
15 #include "common_setup.h"
16 #include "exynos5_setup.h"
17 #include "clock_init.h"
18 
19 #define TIMEOUT_US		10000
20 #define NUM_BYTE_LANES		4
21 #define DEFAULT_DQS		8
22 #define DEFAULT_DQS_X4		((DEFAULT_DQS << 24) || (DEFAULT_DQS << 16) \
23 				|| (DEFAULT_DQS << 8) || (DEFAULT_DQS << 0))
24 
25 #ifdef CONFIG_EXYNOS5250
reset_phy_ctrl(void)26 static void reset_phy_ctrl(void)
27 {
28 	struct exynos5_clock *clk =
29 		(struct exynos5_clock *)samsung_get_base_clock();
30 
31 	writel(DDR3PHY_CTRL_PHY_RESET_OFF, &clk->lpddr3phy_ctrl);
32 	writel(DDR3PHY_CTRL_PHY_RESET, &clk->lpddr3phy_ctrl);
33 }
34 
ddr3_mem_ctrl_init(struct mem_timings * mem,int reset)35 int ddr3_mem_ctrl_init(struct mem_timings *mem, int reset)
36 {
37 	unsigned int val;
38 	struct exynos5_phy_control *phy0_ctrl, *phy1_ctrl;
39 	struct exynos5_dmc *dmc;
40 	int i;
41 
42 	phy0_ctrl = (struct exynos5_phy_control *)samsung_get_base_dmc_phy();
43 	phy1_ctrl = (struct exynos5_phy_control *)(samsung_get_base_dmc_phy()
44 							+ DMC_OFFSET);
45 	dmc = (struct exynos5_dmc *)samsung_get_base_dmc_ctrl();
46 
47 	if (reset)
48 		reset_phy_ctrl();
49 
50 	/* Set Impedance Output Driver */
51 	val = (mem->impedance << CA_CK_DRVR_DS_OFFSET) |
52 		(mem->impedance << CA_CKE_DRVR_DS_OFFSET) |
53 		(mem->impedance << CA_CS_DRVR_DS_OFFSET) |
54 		(mem->impedance << CA_ADR_DRVR_DS_OFFSET);
55 	writel(val, &phy0_ctrl->phy_con39);
56 	writel(val, &phy1_ctrl->phy_con39);
57 
58 	/* Set Read Latency and Burst Length for PHY0 and PHY1 */
59 	val = (mem->ctrl_bstlen << PHY_CON42_CTRL_BSTLEN_SHIFT) |
60 		(mem->ctrl_rdlat << PHY_CON42_CTRL_RDLAT_SHIFT);
61 	writel(val, &phy0_ctrl->phy_con42);
62 	writel(val, &phy1_ctrl->phy_con42);
63 
64 	/* ZQ Calibration */
65 	if (dmc_config_zq(mem, &phy0_ctrl->phy_con16, &phy1_ctrl->phy_con16,
66 			  &phy0_ctrl->phy_con17, &phy1_ctrl->phy_con17))
67 		return SETUP_ERR_ZQ_CALIBRATION_FAILURE;
68 
69 	/* DQ Signal */
70 	writel(mem->phy0_pulld_dqs, &phy0_ctrl->phy_con14);
71 	writel(mem->phy1_pulld_dqs, &phy1_ctrl->phy_con14);
72 
73 	writel(mem->concontrol | (mem->rd_fetch << CONCONTROL_RD_FETCH_SHIFT)
74 		| (mem->dfi_init_start << CONCONTROL_DFI_INIT_START_SHIFT),
75 		&dmc->concontrol);
76 
77 	update_reset_dll(&dmc->phycontrol0, DDR_MODE_DDR3);
78 
79 	/* DQS Signal */
80 	writel(mem->phy0_dqs, &phy0_ctrl->phy_con4);
81 	writel(mem->phy1_dqs, &phy1_ctrl->phy_con4);
82 
83 	writel(mem->phy0_dq, &phy0_ctrl->phy_con6);
84 	writel(mem->phy1_dq, &phy1_ctrl->phy_con6);
85 
86 	writel(mem->phy0_tFS, &phy0_ctrl->phy_con10);
87 	writel(mem->phy1_tFS, &phy1_ctrl->phy_con10);
88 
89 	val = (mem->ctrl_start_point << PHY_CON12_CTRL_START_POINT_SHIFT) |
90 		(mem->ctrl_inc << PHY_CON12_CTRL_INC_SHIFT) |
91 		(mem->ctrl_dll_on << PHY_CON12_CTRL_DLL_ON_SHIFT) |
92 		(mem->ctrl_ref << PHY_CON12_CTRL_REF_SHIFT);
93 	writel(val, &phy0_ctrl->phy_con12);
94 	writel(val, &phy1_ctrl->phy_con12);
95 
96 	/* Start DLL locking */
97 	writel(val | (mem->ctrl_start << PHY_CON12_CTRL_START_SHIFT),
98 	       &phy0_ctrl->phy_con12);
99 	writel(val | (mem->ctrl_start << PHY_CON12_CTRL_START_SHIFT),
100 	       &phy1_ctrl->phy_con12);
101 
102 	update_reset_dll(&dmc->phycontrol0, DDR_MODE_DDR3);
103 
104 	writel(mem->concontrol | (mem->rd_fetch << CONCONTROL_RD_FETCH_SHIFT),
105 	       &dmc->concontrol);
106 
107 	/* Memory Channel Inteleaving Size */
108 	writel(mem->iv_size, &dmc->ivcontrol);
109 
110 	writel(mem->memconfig, &dmc->memconfig0);
111 	writel(mem->memconfig, &dmc->memconfig1);
112 	writel(mem->membaseconfig0, &dmc->membaseconfig0);
113 	writel(mem->membaseconfig1, &dmc->membaseconfig1);
114 
115 	/* Precharge Configuration */
116 	writel(mem->prechconfig_tp_cnt << PRECHCONFIG_TP_CNT_SHIFT,
117 	       &dmc->prechconfig);
118 
119 	/* Power Down mode Configuration */
120 	writel(mem->dpwrdn_cyc << PWRDNCONFIG_DPWRDN_CYC_SHIFT |
121 		mem->dsref_cyc << PWRDNCONFIG_DSREF_CYC_SHIFT,
122 		&dmc->pwrdnconfig);
123 
124 	/* TimingRow, TimingData, TimingPower and Timingaref
125 	 * values as per Memory AC parameters
126 	 */
127 	writel(mem->timing_ref, &dmc->timingref);
128 	writel(mem->timing_row, &dmc->timingrow);
129 	writel(mem->timing_data, &dmc->timingdata);
130 	writel(mem->timing_power, &dmc->timingpower);
131 
132 	/* Send PALL command */
133 	dmc_config_prech(mem, &dmc->directcmd);
134 
135 	/* Send NOP, MRS and ZQINIT commands */
136 	dmc_config_mrs(mem, &dmc->directcmd);
137 
138 	if (mem->gate_leveling_enable) {
139 		val = PHY_CON0_RESET_VAL;
140 		val |= P0_CMD_EN;
141 		writel(val, &phy0_ctrl->phy_con0);
142 		writel(val, &phy1_ctrl->phy_con0);
143 
144 		val = PHY_CON2_RESET_VAL;
145 		val |= INIT_DESKEW_EN;
146 		writel(val, &phy0_ctrl->phy_con2);
147 		writel(val, &phy1_ctrl->phy_con2);
148 
149 		val = PHY_CON0_RESET_VAL;
150 		val |= P0_CMD_EN;
151 		val |= BYTE_RDLVL_EN;
152 		writel(val, &phy0_ctrl->phy_con0);
153 		writel(val, &phy1_ctrl->phy_con0);
154 
155 		val = (mem->ctrl_start_point <<
156 				PHY_CON12_CTRL_START_POINT_SHIFT) |
157 			(mem->ctrl_inc << PHY_CON12_CTRL_INC_SHIFT) |
158 			(mem->ctrl_force << PHY_CON12_CTRL_FORCE_SHIFT) |
159 			(mem->ctrl_start << PHY_CON12_CTRL_START_SHIFT) |
160 			(mem->ctrl_ref << PHY_CON12_CTRL_REF_SHIFT);
161 		writel(val, &phy0_ctrl->phy_con12);
162 		writel(val, &phy1_ctrl->phy_con12);
163 
164 		val = PHY_CON2_RESET_VAL;
165 		val |= INIT_DESKEW_EN;
166 		val |= RDLVL_GATE_EN;
167 		writel(val, &phy0_ctrl->phy_con2);
168 		writel(val, &phy1_ctrl->phy_con2);
169 
170 		val = PHY_CON0_RESET_VAL;
171 		val |= P0_CMD_EN;
172 		val |= BYTE_RDLVL_EN;
173 		val |= CTRL_SHGATE;
174 		writel(val, &phy0_ctrl->phy_con0);
175 		writel(val, &phy1_ctrl->phy_con0);
176 
177 		val = PHY_CON1_RESET_VAL;
178 		val &= ~(CTRL_GATEDURADJ_MASK);
179 		writel(val, &phy0_ctrl->phy_con1);
180 		writel(val, &phy1_ctrl->phy_con1);
181 
182 		writel(CTRL_RDLVL_GATE_ENABLE, &dmc->rdlvl_config);
183 		i = TIMEOUT_US;
184 		while ((readl(&dmc->phystatus) &
185 			(RDLVL_COMPLETE_CHO | RDLVL_COMPLETE_CH1)) !=
186 			(RDLVL_COMPLETE_CHO | RDLVL_COMPLETE_CH1) && i > 0) {
187 			/*
188 			 * TODO(waihong): Comment on how long this take to
189 			 * timeout
190 			 */
191 			sdelay(100);
192 			i--;
193 		}
194 		if (!i)
195 			return SETUP_ERR_RDLV_COMPLETE_TIMEOUT;
196 		writel(CTRL_RDLVL_GATE_DISABLE, &dmc->rdlvl_config);
197 
198 		writel(0, &phy0_ctrl->phy_con14);
199 		writel(0, &phy1_ctrl->phy_con14);
200 
201 		val = (mem->ctrl_start_point <<
202 				PHY_CON12_CTRL_START_POINT_SHIFT) |
203 			(mem->ctrl_inc << PHY_CON12_CTRL_INC_SHIFT) |
204 			(mem->ctrl_force << PHY_CON12_CTRL_FORCE_SHIFT) |
205 			(mem->ctrl_start << PHY_CON12_CTRL_START_SHIFT) |
206 			(mem->ctrl_dll_on << PHY_CON12_CTRL_DLL_ON_SHIFT) |
207 			(mem->ctrl_ref << PHY_CON12_CTRL_REF_SHIFT);
208 		writel(val, &phy0_ctrl->phy_con12);
209 		writel(val, &phy1_ctrl->phy_con12);
210 
211 		update_reset_dll(&dmc->phycontrol0, DDR_MODE_DDR3);
212 	}
213 
214 	/* Send PALL command */
215 	dmc_config_prech(mem, &dmc->directcmd);
216 
217 	writel(mem->memcontrol, &dmc->memcontrol);
218 
219 	/* Set DMC Concontrol and enable auto-refresh counter */
220 	writel(mem->concontrol | (mem->rd_fetch << CONCONTROL_RD_FETCH_SHIFT)
221 		| (mem->aref_en << CONCONTROL_AREF_EN_SHIFT), &dmc->concontrol);
222 	return 0;
223 }
224 #endif
225 
226 #ifdef CONFIG_EXYNOS5420
227 /**
228  * RAM address to use in the test.
229  *
230  * We'll use 4 words at this address and 4 at this address + 0x80 (Ares
231  * interleaves channels every 128 bytes).  This will allow us to evaluate all of
232  * the chips in a 1 chip per channel (2GB) system and half the chips in a 2
233  * chip per channel (4GB) system.  We can't test the 2nd chip since we need to
234  * do tests before the 2nd chip is enabled.  Looking at the 2nd chip isn't
235  * critical because the 1st and 2nd chip have very similar timings (they'd
236  * better have similar timings, since there's only a single adjustment that is
237  * shared by both chips).
238  */
239 const unsigned int test_addr = CONFIG_SYS_SDRAM_BASE;
240 
241 /* Test pattern with which RAM will be tested */
242 static const unsigned int test_pattern[] = {
243 	0x5a5a5a5a,
244 	0xa5a5a5a5,
245 	0xf0f0f0f0,
246 	0x0f0f0f0f,
247 };
248 
249 /**
250  * This function is a test vector for sw read leveling,
251  * it compares the read data with the written data.
252  *
253  * @param ch			DMC channel number
254  * @param byte_lane		which DQS byte offset,
255  *				possible values are 0,1,2,3
256  * @return			TRUE if memory was good, FALSE if not.
257  */
dmc_valid_window_test_vector(int ch,int byte_lane)258 static bool dmc_valid_window_test_vector(int ch, int byte_lane)
259 {
260 	unsigned int read_data;
261 	unsigned int mask;
262 	int i;
263 
264 	mask = 0xFF << (8 * byte_lane);
265 
266 	for (i = 0; i < ARRAY_SIZE(test_pattern); i++) {
267 		read_data = readl(test_addr + i * 4 + ch * 0x80);
268 		if ((read_data & mask) != (test_pattern[i] & mask))
269 			return false;
270 	}
271 
272 	return true;
273 }
274 
275 /**
276  * This function returns current read offset value.
277  *
278  * @param phy_ctrl	pointer to the current phy controller
279  */
dmc_get_read_offset_value(struct exynos5420_phy_control * phy_ctrl)280 static unsigned int dmc_get_read_offset_value(struct exynos5420_phy_control
281 					       *phy_ctrl)
282 {
283 	return readl(&phy_ctrl->phy_con4);
284 }
285 
286 /**
287  * This function performs resync, so that slave DLL is updated.
288  *
289  * @param phy_ctrl	pointer to the current phy controller
290  */
ddr_phy_set_do_resync(struct exynos5420_phy_control * phy_ctrl)291 static void ddr_phy_set_do_resync(struct exynos5420_phy_control *phy_ctrl)
292 {
293 	setbits_le32(&phy_ctrl->phy_con10, PHY_CON10_CTRL_OFFSETR3);
294 	clrbits_le32(&phy_ctrl->phy_con10, PHY_CON10_CTRL_OFFSETR3);
295 }
296 
297 /**
298  * This function sets read offset value register with 'offset'.
299  *
300  * ...we also call call ddr_phy_set_do_resync().
301  *
302  * @param phy_ctrl	pointer to the current phy controller
303  * @param offset	offset to read DQS
304  */
dmc_set_read_offset_value(struct exynos5420_phy_control * phy_ctrl,unsigned int offset)305 static void dmc_set_read_offset_value(struct exynos5420_phy_control *phy_ctrl,
306 				      unsigned int offset)
307 {
308 	writel(offset, &phy_ctrl->phy_con4);
309 	ddr_phy_set_do_resync(phy_ctrl);
310 }
311 
312 /**
313  * Convert a 2s complement byte to a byte with a sign bit.
314  *
315  * NOTE: you shouldn't use normal math on the number returned by this function.
316  *   As an example, -10 = 0xf6.  After this function -10 = 0x8a.  If you wanted
317  *   to do math and get the average of 10 and -10 (should be 0):
318  *     0x8a + 0xa = 0x94 (-108)
319  *     0x94 / 2   = 0xca (-54)
320  *   ...and 0xca = sign bit plus 0x4a, or -74
321  *
322  * Also note that you lose the ability to represent -128 since there are two
323  * representations of 0.
324  *
325  * @param b	The byte to convert in two's complement.
326  * @return	The 7-bit value + sign bit.
327  */
328 
make_signed_byte(signed char b)329 unsigned char make_signed_byte(signed char b)
330 {
331 	if (b < 0)
332 		return 0x80 | -b;
333 	else
334 		return b;
335 }
336 
337 /**
338  * Test various shifts starting at 'start' and going to 'end'.
339  *
340  * For each byte lane, we'll walk through shift starting at 'start' and going
341  * to 'end' (inclusive).  When we are finally able to read the test pattern
342  * we'll store the value in the results array.
343  *
344  * @param phy_ctrl		pointer to the current phy controller
345  * @param ch			channel number
346  * @param start			the start shift.  -127 to 127
347  * @param end			the end shift.  -127 to 127
348  * @param results		we'll store results for each byte lane.
349  */
350 
test_shifts(struct exynos5420_phy_control * phy_ctrl,int ch,int start,int end,int results[NUM_BYTE_LANES])351 void test_shifts(struct exynos5420_phy_control *phy_ctrl, int ch,
352 		 int start, int end, int results[NUM_BYTE_LANES])
353 {
354 	int incr = (start < end) ? 1 : -1;
355 	int byte_lane;
356 
357 	for (byte_lane = 0; byte_lane < NUM_BYTE_LANES; byte_lane++) {
358 		int shift;
359 
360 		dmc_set_read_offset_value(phy_ctrl, DEFAULT_DQS_X4);
361 		results[byte_lane] = DEFAULT_DQS;
362 
363 		for (shift = start; shift != (end + incr); shift += incr) {
364 			unsigned int byte_offsetr;
365 			unsigned int offsetr;
366 
367 			byte_offsetr = make_signed_byte(shift);
368 
369 			offsetr = dmc_get_read_offset_value(phy_ctrl);
370 			offsetr &= ~(0xFF << (8 * byte_lane));
371 			offsetr |= (byte_offsetr << (8 * byte_lane));
372 			dmc_set_read_offset_value(phy_ctrl, offsetr);
373 
374 			if (dmc_valid_window_test_vector(ch, byte_lane)) {
375 				results[byte_lane] = shift;
376 				break;
377 			}
378 		}
379 	}
380 }
381 
382 /**
383  * This function performs SW read leveling to compensate DQ-DQS skew at
384  * receiver it first finds the optimal read offset value on each DQS
385  * then applies the value to PHY.
386  *
387  * Read offset value has its min margin and max margin. If read offset
388  * value exceeds its min or max margin, read data will have corruption.
389  * To avoid this we are doing sw read leveling.
390  *
391  * SW read leveling is:
392  * 1> Finding offset value's left_limit and right_limit
393  * 2> and calculate its center value
394  * 3> finally programs that center value to PHY
395  * 4> then PHY gets its optimal offset value.
396  *
397  * @param phy_ctrl		pointer to the current phy controller
398  * @param ch			channel number
399  * @param coarse_lock_val	The coarse lock value read from PHY_CON13.
400  *				(0 - 0x7f)
401  */
software_find_read_offset(struct exynos5420_phy_control * phy_ctrl,int ch,unsigned int coarse_lock_val)402 static void software_find_read_offset(struct exynos5420_phy_control *phy_ctrl,
403 				      int ch, unsigned int coarse_lock_val)
404 {
405 	unsigned int offsetr_cent;
406 	int byte_lane;
407 	int left_limit;
408 	int right_limit;
409 	int left[NUM_BYTE_LANES];
410 	int right[NUM_BYTE_LANES];
411 	int i;
412 
413 	/* Fill the memory with test patterns */
414 	for (i = 0; i < ARRAY_SIZE(test_pattern); i++)
415 		writel(test_pattern[i], test_addr + i * 4 + ch * 0x80);
416 
417 	/* Figure out the limits we'll test with; keep -127 < limit < 127 */
418 	left_limit = DEFAULT_DQS - coarse_lock_val;
419 	right_limit = DEFAULT_DQS + coarse_lock_val;
420 	if (right_limit > 127)
421 		right_limit = 127;
422 
423 	/* Fill in the location where reads were OK from left and right */
424 	test_shifts(phy_ctrl, ch, left_limit, right_limit, left);
425 	test_shifts(phy_ctrl, ch, right_limit, left_limit, right);
426 
427 	/* Make a final value by taking the center between the left and right */
428 	offsetr_cent = 0;
429 	for (byte_lane = 0; byte_lane < NUM_BYTE_LANES; byte_lane++) {
430 		int temp_center;
431 		unsigned int vmwc;
432 
433 		temp_center = (left[byte_lane] + right[byte_lane]) / 2;
434 		vmwc = make_signed_byte(temp_center);
435 		offsetr_cent |= vmwc << (8 * byte_lane);
436 	}
437 	dmc_set_read_offset_value(phy_ctrl, offsetr_cent);
438 }
439 
ddr3_mem_ctrl_init(struct mem_timings * mem,int reset)440 int ddr3_mem_ctrl_init(struct mem_timings *mem, int reset)
441 {
442 	struct exynos5420_clock *clk =
443 		(struct exynos5420_clock *)samsung_get_base_clock();
444 	struct exynos5420_power *power =
445 		(struct exynos5420_power *)samsung_get_base_power();
446 	struct exynos5420_phy_control *phy0_ctrl, *phy1_ctrl;
447 	struct exynos5420_dmc *drex0, *drex1;
448 	struct exynos5420_tzasc *tzasc0, *tzasc1;
449 	struct exynos5_power *pmu;
450 	uint32_t val, n_lock_r, n_lock_w_phy0, n_lock_w_phy1;
451 	uint32_t lock0_info, lock1_info;
452 	int chip;
453 	int i;
454 
455 	phy0_ctrl = (struct exynos5420_phy_control *)samsung_get_base_dmc_phy();
456 	phy1_ctrl = (struct exynos5420_phy_control *)(samsung_get_base_dmc_phy()
457 							+ DMC_OFFSET);
458 	drex0 = (struct exynos5420_dmc *)samsung_get_base_dmc_ctrl();
459 	drex1 = (struct exynos5420_dmc *)(samsung_get_base_dmc_ctrl()
460 							+ DMC_OFFSET);
461 	tzasc0 = (struct exynos5420_tzasc *)samsung_get_base_dmc_tzasc();
462 	tzasc1 = (struct exynos5420_tzasc *)(samsung_get_base_dmc_tzasc()
463 							+ DMC_OFFSET);
464 	pmu = (struct exynos5_power *)EXYNOS5420_POWER_BASE;
465 
466 	if (CONFIG_NR_DRAM_BANKS > 4) {
467 		/* Need both controllers. */
468 		mem->memcontrol |= DMC_MEMCONTROL_NUM_CHIP_2;
469 		mem->chips_per_channel = 2;
470 		mem->chips_to_configure = 2;
471 	} else {
472 		/* 2GB requires a single controller */
473 		mem->memcontrol |= DMC_MEMCONTROL_NUM_CHIP_1;
474 	}
475 
476 	/* Enable PAUSE for DREX */
477 	setbits_le32(&clk->pause, ENABLE_BIT);
478 
479 	/* Enable BYPASS mode */
480 	setbits_le32(&clk->bpll_con1, BYPASS_EN);
481 
482 	writel(MUX_BPLL_SEL_FOUTBPLL, &clk->src_cdrex);
483 	do {
484 		val = readl(&clk->mux_stat_cdrex);
485 		val &= BPLL_SEL_MASK;
486 	} while (val != FOUTBPLL);
487 
488 	clrbits_le32(&clk->bpll_con1, BYPASS_EN);
489 
490 	/* Specify the DDR memory type as DDR3 */
491 	val = readl(&phy0_ctrl->phy_con0);
492 	val &= ~(PHY_CON0_CTRL_DDR_MODE_MASK << PHY_CON0_CTRL_DDR_MODE_SHIFT);
493 	val |= (DDR_MODE_DDR3 << PHY_CON0_CTRL_DDR_MODE_SHIFT);
494 	writel(val, &phy0_ctrl->phy_con0);
495 
496 	val = readl(&phy1_ctrl->phy_con0);
497 	val &= ~(PHY_CON0_CTRL_DDR_MODE_MASK << PHY_CON0_CTRL_DDR_MODE_SHIFT);
498 	val |= (DDR_MODE_DDR3 << PHY_CON0_CTRL_DDR_MODE_SHIFT);
499 	writel(val, &phy1_ctrl->phy_con0);
500 
501 	/* Set Read Latency and Burst Length for PHY0 and PHY1 */
502 	val = (mem->ctrl_bstlen << PHY_CON42_CTRL_BSTLEN_SHIFT) |
503 		(mem->ctrl_rdlat << PHY_CON42_CTRL_RDLAT_SHIFT);
504 	writel(val, &phy0_ctrl->phy_con42);
505 	writel(val, &phy1_ctrl->phy_con42);
506 
507 	val = readl(&phy0_ctrl->phy_con26);
508 	val &= ~(T_WRDATA_EN_MASK << T_WRDATA_EN_OFFSET);
509 	val |= (T_WRDATA_EN_DDR3 << T_WRDATA_EN_OFFSET);
510 	writel(val, &phy0_ctrl->phy_con26);
511 
512 	val = readl(&phy1_ctrl->phy_con26);
513 	val &= ~(T_WRDATA_EN_MASK << T_WRDATA_EN_OFFSET);
514 	val |= (T_WRDATA_EN_DDR3 << T_WRDATA_EN_OFFSET);
515 	writel(val, &phy1_ctrl->phy_con26);
516 
517 	/*
518 	 * Set Driver strength for CK, CKE, CS & CA to 0x7
519 	 * Set Driver strength for Data Slice 0~3 to 0x7
520 	 */
521 	val = (0x7 << CA_CK_DRVR_DS_OFFSET) | (0x7 << CA_CKE_DRVR_DS_OFFSET) |
522 		(0x7 << CA_CS_DRVR_DS_OFFSET) | (0x7 << CA_ADR_DRVR_DS_OFFSET);
523 	val |= (0x7 << DA_3_DS_OFFSET) | (0x7 << DA_2_DS_OFFSET) |
524 		(0x7 << DA_1_DS_OFFSET) | (0x7 << DA_0_DS_OFFSET);
525 	writel(val, &phy0_ctrl->phy_con39);
526 	writel(val, &phy1_ctrl->phy_con39);
527 
528 	/* ZQ Calibration */
529 	if (dmc_config_zq(mem, &phy0_ctrl->phy_con16, &phy1_ctrl->phy_con16,
530 			  &phy0_ctrl->phy_con17, &phy1_ctrl->phy_con17))
531 		return SETUP_ERR_ZQ_CALIBRATION_FAILURE;
532 
533 	clrbits_le32(&phy0_ctrl->phy_con16, ZQ_CLK_DIV_EN);
534 	clrbits_le32(&phy1_ctrl->phy_con16, ZQ_CLK_DIV_EN);
535 
536 	/* DQ Signal */
537 	val = readl(&phy0_ctrl->phy_con14);
538 	val |= mem->phy0_pulld_dqs;
539 	writel(val, &phy0_ctrl->phy_con14);
540 	val = readl(&phy1_ctrl->phy_con14);
541 	val |= mem->phy1_pulld_dqs;
542 	writel(val, &phy1_ctrl->phy_con14);
543 
544 	val = MEM_TERM_EN | PHY_TERM_EN;
545 	writel(val, &drex0->phycontrol0);
546 	writel(val, &drex1->phycontrol0);
547 
548 	writel(mem->concontrol |
549 		(mem->dfi_init_start << CONCONTROL_DFI_INIT_START_SHIFT) |
550 		(mem->rd_fetch << CONCONTROL_RD_FETCH_SHIFT),
551 		&drex0->concontrol);
552 	writel(mem->concontrol |
553 		(mem->dfi_init_start << CONCONTROL_DFI_INIT_START_SHIFT) |
554 		(mem->rd_fetch << CONCONTROL_RD_FETCH_SHIFT),
555 		&drex1->concontrol);
556 
557 	do {
558 		val = readl(&drex0->phystatus);
559 	} while ((val & DFI_INIT_COMPLETE) != DFI_INIT_COMPLETE);
560 	do {
561 		val = readl(&drex1->phystatus);
562 	} while ((val & DFI_INIT_COMPLETE) != DFI_INIT_COMPLETE);
563 
564 	clrbits_le32(&drex0->concontrol, DFI_INIT_START);
565 	clrbits_le32(&drex1->concontrol, DFI_INIT_START);
566 
567 	update_reset_dll(&drex0->phycontrol0, DDR_MODE_DDR3);
568 	update_reset_dll(&drex1->phycontrol0, DDR_MODE_DDR3);
569 
570 	/*
571 	 * Set Base Address:
572 	 * 0x2000_0000 ~ 0x5FFF_FFFF
573 	 * 0x6000_0000 ~ 0x9FFF_FFFF
574 	 */
575 	/* MEMBASECONFIG0 */
576 	val = DMC_MEMBASECONFIGX_CHIP_BASE(DMC_CHIP_BASE_0) |
577 		DMC_MEMBASECONFIGX_CHIP_MASK(DMC_CHIP_MASK);
578 	writel(val, &tzasc0->membaseconfig0);
579 	writel(val, &tzasc1->membaseconfig0);
580 
581 	/* MEMBASECONFIG1 */
582 	val = DMC_MEMBASECONFIGX_CHIP_BASE(DMC_CHIP_BASE_1) |
583 		DMC_MEMBASECONFIGX_CHIP_MASK(DMC_CHIP_MASK);
584 	writel(val, &tzasc0->membaseconfig1);
585 	writel(val, &tzasc1->membaseconfig1);
586 
587 	/*
588 	 * Memory Channel Inteleaving Size
589 	 * Ares Channel interleaving = 128 bytes
590 	 */
591 	/* MEMCONFIG0/1 */
592 	writel(mem->memconfig, &tzasc0->memconfig0);
593 	writel(mem->memconfig, &tzasc1->memconfig0);
594 	writel(mem->memconfig, &tzasc0->memconfig1);
595 	writel(mem->memconfig, &tzasc1->memconfig1);
596 
597 	/* Precharge Configuration */
598 	writel(mem->prechconfig_tp_cnt << PRECHCONFIG_TP_CNT_SHIFT,
599 	       &drex0->prechconfig0);
600 	writel(mem->prechconfig_tp_cnt << PRECHCONFIG_TP_CNT_SHIFT,
601 	       &drex1->prechconfig0);
602 
603 	/*
604 	 * TimingRow, TimingData, TimingPower and Timingaref
605 	 * values as per Memory AC parameters
606 	 */
607 	writel(mem->timing_ref, &drex0->timingref);
608 	writel(mem->timing_ref, &drex1->timingref);
609 	writel(mem->timing_row, &drex0->timingrow0);
610 	writel(mem->timing_row, &drex1->timingrow0);
611 	writel(mem->timing_data, &drex0->timingdata0);
612 	writel(mem->timing_data, &drex1->timingdata0);
613 	writel(mem->timing_power, &drex0->timingpower0);
614 	writel(mem->timing_power, &drex1->timingpower0);
615 
616 	if (reset) {
617 		/*
618 		 * Send NOP, MRS and ZQINIT commands
619 		 * Sending MRS command will reset the DRAM. We should not be
620 		 * resetting the DRAM after resume, this will lead to memory
621 		 * corruption as DRAM content is lost after DRAM reset
622 		 */
623 		dmc_config_mrs(mem, &drex0->directcmd);
624 		dmc_config_mrs(mem, &drex1->directcmd);
625 	}
626 
627 	/*
628 	 * Get PHY_CON13 from both phys.  Gate CLKM around reading since
629 	 * PHY_CON13 is glitchy when CLKM is running.  We're paranoid and
630 	 * wait until we get a "fine lock", though a coarse lock is probably
631 	 * OK (we only use the coarse numbers below).  We try to gate the
632 	 * clock for as short a time as possible in case SDRAM is somehow
633 	 * sensitive.  sdelay(10) in the loop is arbitrary to make sure
634 	 * there is some time for PHY_CON13 to get updated.  In practice
635 	 * no delay appears to be needed.
636 	 */
637 	val = readl(&clk->gate_bus_cdrex);
638 	while (true) {
639 		writel(val & ~0x1, &clk->gate_bus_cdrex);
640 		lock0_info = readl(&phy0_ctrl->phy_con13);
641 		writel(val, &clk->gate_bus_cdrex);
642 
643 		if ((lock0_info & CTRL_FINE_LOCKED) == CTRL_FINE_LOCKED)
644 			break;
645 
646 		sdelay(10);
647 	}
648 	while (true) {
649 		writel(val & ~0x2, &clk->gate_bus_cdrex);
650 		lock1_info = readl(&phy1_ctrl->phy_con13);
651 		writel(val, &clk->gate_bus_cdrex);
652 
653 		if ((lock1_info & CTRL_FINE_LOCKED) == CTRL_FINE_LOCKED)
654 			break;
655 
656 		sdelay(10);
657 	}
658 
659 	if (!reset) {
660 		/*
661 		 * During Suspend-Resume & S/W-Reset, as soon as PMU releases
662 		 * pad retention, CKE goes high. This causes memory contents
663 		 * not to be retained during DRAM initialization. Therfore,
664 		 * there is a new control register(0x100431e8[28]) which lets us
665 		 * release pad retention and retain the memory content until the
666 		 * initialization is complete.
667 		 */
668 		writel(PAD_RETENTION_DRAM_COREBLK_VAL,
669 		       &power->pad_retention_dram_coreblk_option);
670 		do {
671 			val = readl(&power->pad_retention_dram_status);
672 		} while (val != 0x1);
673 
674 		/*
675 		 * CKE PAD retention disables DRAM self-refresh mode.
676 		 * Send auto refresh command for DRAM refresh.
677 		 */
678 		for (i = 0; i < 128; i++) {
679 			for (chip = 0; chip < mem->chips_to_configure; chip++) {
680 				writel(DIRECT_CMD_REFA |
681 				       (chip << DIRECT_CMD_CHIP_SHIFT),
682 				       &drex0->directcmd);
683 				writel(DIRECT_CMD_REFA |
684 				       (chip << DIRECT_CMD_CHIP_SHIFT),
685 				       &drex1->directcmd);
686 			}
687 		}
688 	}
689 
690 	if (mem->gate_leveling_enable) {
691 		writel(PHY_CON0_RESET_VAL, &phy0_ctrl->phy_con0);
692 		writel(PHY_CON0_RESET_VAL, &phy1_ctrl->phy_con0);
693 
694 		setbits_le32(&phy0_ctrl->phy_con0, P0_CMD_EN);
695 		setbits_le32(&phy1_ctrl->phy_con0, P0_CMD_EN);
696 
697 		val = PHY_CON2_RESET_VAL;
698 		val |= INIT_DESKEW_EN;
699 		writel(val, &phy0_ctrl->phy_con2);
700 		writel(val, &phy1_ctrl->phy_con2);
701 
702 		val =  readl(&phy0_ctrl->phy_con1);
703 		val |= (RDLVL_PASS_ADJ_VAL << RDLVL_PASS_ADJ_OFFSET);
704 		writel(val, &phy0_ctrl->phy_con1);
705 
706 		val =  readl(&phy1_ctrl->phy_con1);
707 		val |= (RDLVL_PASS_ADJ_VAL << RDLVL_PASS_ADJ_OFFSET);
708 		writel(val, &phy1_ctrl->phy_con1);
709 
710 		n_lock_w_phy0 = (lock0_info & CTRL_LOCK_COARSE_MASK) >> 2;
711 		n_lock_r = readl(&phy0_ctrl->phy_con12);
712 		n_lock_r &= ~CTRL_DLL_ON;
713 		n_lock_r |= n_lock_w_phy0;
714 		writel(n_lock_r, &phy0_ctrl->phy_con12);
715 
716 		n_lock_w_phy1 = (lock1_info & CTRL_LOCK_COARSE_MASK) >> 2;
717 		n_lock_r = readl(&phy1_ctrl->phy_con12);
718 		n_lock_r &= ~CTRL_DLL_ON;
719 		n_lock_r |= n_lock_w_phy1;
720 		writel(n_lock_r, &phy1_ctrl->phy_con12);
721 
722 		val = (0x3 << DIRECT_CMD_BANK_SHIFT) | 0x4;
723 		for (chip = 0; chip < mem->chips_to_configure; chip++) {
724 			writel(val | (chip << DIRECT_CMD_CHIP_SHIFT),
725 			       &drex0->directcmd);
726 			writel(val | (chip << DIRECT_CMD_CHIP_SHIFT),
727 			       &drex1->directcmd);
728 		}
729 
730 		setbits_le32(&phy0_ctrl->phy_con2, RDLVL_GATE_EN);
731 		setbits_le32(&phy1_ctrl->phy_con2, RDLVL_GATE_EN);
732 
733 		setbits_le32(&phy0_ctrl->phy_con0, CTRL_SHGATE);
734 		setbits_le32(&phy1_ctrl->phy_con0, CTRL_SHGATE);
735 
736 		val = readl(&phy0_ctrl->phy_con1);
737 		val &= ~(CTRL_GATEDURADJ_MASK);
738 		writel(val, &phy0_ctrl->phy_con1);
739 
740 		val = readl(&phy1_ctrl->phy_con1);
741 		val &= ~(CTRL_GATEDURADJ_MASK);
742 		writel(val, &phy1_ctrl->phy_con1);
743 
744 		writel(CTRL_RDLVL_GATE_ENABLE, &drex0->rdlvl_config);
745 		i = TIMEOUT_US;
746 		while (((readl(&drex0->phystatus) & RDLVL_COMPLETE_CHO) !=
747 			RDLVL_COMPLETE_CHO) && (i > 0)) {
748 			/*
749 			 * TODO(waihong): Comment on how long this take to
750 			 * timeout
751 			 */
752 			sdelay(100);
753 			i--;
754 		}
755 		if (!i)
756 			return SETUP_ERR_RDLV_COMPLETE_TIMEOUT;
757 		writel(CTRL_RDLVL_GATE_DISABLE, &drex0->rdlvl_config);
758 
759 		writel(CTRL_RDLVL_GATE_ENABLE, &drex1->rdlvl_config);
760 		i = TIMEOUT_US;
761 		while (((readl(&drex1->phystatus) & RDLVL_COMPLETE_CHO) !=
762 			RDLVL_COMPLETE_CHO) && (i > 0)) {
763 			/*
764 			 * TODO(waihong): Comment on how long this take to
765 			 * timeout
766 			 */
767 			sdelay(100);
768 			i--;
769 		}
770 		if (!i)
771 			return SETUP_ERR_RDLV_COMPLETE_TIMEOUT;
772 		writel(CTRL_RDLVL_GATE_DISABLE, &drex1->rdlvl_config);
773 
774 		writel(0, &phy0_ctrl->phy_con14);
775 		writel(0, &phy1_ctrl->phy_con14);
776 
777 		val = (0x3 << DIRECT_CMD_BANK_SHIFT);
778 		for (chip = 0; chip < mem->chips_to_configure; chip++) {
779 			writel(val | (chip << DIRECT_CMD_CHIP_SHIFT),
780 			       &drex0->directcmd);
781 			writel(val | (chip << DIRECT_CMD_CHIP_SHIFT),
782 			       &drex1->directcmd);
783 		}
784 
785 		/* Common Settings for Leveling */
786 		val = PHY_CON12_RESET_VAL;
787 		writel((val + n_lock_w_phy0), &phy0_ctrl->phy_con12);
788 		writel((val + n_lock_w_phy1), &phy1_ctrl->phy_con12);
789 
790 		setbits_le32(&phy0_ctrl->phy_con2, DLL_DESKEW_EN);
791 		setbits_le32(&phy1_ctrl->phy_con2, DLL_DESKEW_EN);
792 	}
793 
794 	/*
795 	 * Do software read leveling
796 	 *
797 	 * Do this before we turn on auto refresh since the auto refresh can
798 	 * be in conflict with the resync operation that's part of setting
799 	 * read leveling.
800 	 */
801 	if (!reset) {
802 		/* restore calibrated value after resume */
803 		dmc_set_read_offset_value(phy0_ctrl, readl(&pmu->pmu_spare1));
804 		dmc_set_read_offset_value(phy1_ctrl, readl(&pmu->pmu_spare2));
805 	} else {
806 		software_find_read_offset(phy0_ctrl, 0,
807 					  CTRL_LOCK_COARSE(lock0_info));
808 		software_find_read_offset(phy1_ctrl, 1,
809 					  CTRL_LOCK_COARSE(lock1_info));
810 		/* save calibrated value to restore after resume */
811 		writel(dmc_get_read_offset_value(phy0_ctrl), &pmu->pmu_spare1);
812 		writel(dmc_get_read_offset_value(phy1_ctrl), &pmu->pmu_spare2);
813 	}
814 
815 	/* Send PALL command */
816 	dmc_config_prech(mem, &drex0->directcmd);
817 	dmc_config_prech(mem, &drex1->directcmd);
818 
819 	writel(mem->memcontrol, &drex0->memcontrol);
820 	writel(mem->memcontrol, &drex1->memcontrol);
821 
822 	/*
823 	 * Set DMC Concontrol: Enable auto-refresh counter, provide
824 	 * read data fetch cycles and enable DREX auto set powerdown
825 	 * for input buffer of I/O in none read memory state.
826 	 */
827 	writel(mem->concontrol | (mem->aref_en << CONCONTROL_AREF_EN_SHIFT) |
828 		(mem->rd_fetch << CONCONTROL_RD_FETCH_SHIFT)|
829 		DMC_CONCONTROL_IO_PD_CON(0x2),
830 		&drex0->concontrol);
831 	writel(mem->concontrol | (mem->aref_en << CONCONTROL_AREF_EN_SHIFT) |
832 		(mem->rd_fetch << CONCONTROL_RD_FETCH_SHIFT)|
833 		DMC_CONCONTROL_IO_PD_CON(0x2),
834 		&drex1->concontrol);
835 
836 	/*
837 	 * Enable Clock Gating Control for DMC
838 	 * this saves around 25 mw dmc power as compared to the power
839 	 * consumption without these bits enabled
840 	 */
841 	setbits_le32(&drex0->cgcontrol, DMC_INTERNAL_CG);
842 	setbits_le32(&drex1->cgcontrol, DMC_INTERNAL_CG);
843 
844 	/*
845 	 * As per Exynos5800 UM ver 0.00 section 17.13.2.1
846 	 * CONCONTROL register bit 3 [update_mode], Exynos5800 does not
847 	 * support the PHY initiated update. And it is recommended to set
848 	 * this field to 1'b1 during initialization
849 	 *
850 	 * When we apply PHY-initiated mode, DLL lock value is determined
851 	 * once at DMC init time and not updated later when we change the MIF
852 	 * voltage based on ASV group in kernel. Applying MC-initiated mode
853 	 * makes sure that DLL tracing is ON so that silicon is able to
854 	 * compensate the voltage variation.
855 	 */
856 	val = readl(&drex0->concontrol);
857 	val |= CONCONTROL_UPDATE_MODE;
858 	writel(val, &drex0->concontrol);
859 	val = readl(&drex1->concontrol);
860 	val |= CONCONTROL_UPDATE_MODE;
861 	writel(val, &drex1->concontrol);
862 
863 	return 0;
864 }
865 #endif
866